• DocumentCode
    1733976
  • Title

    Measurements of statistical lag time of breakdown in thin amorphous layers of SiO2

  • Author

    Vainer, B.G. ; Kupershtokh, A.L.

  • Author_Institution
    Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia
  • Volume
    1
  • fYear
    1998
  • Firstpage
    169
  • Abstract
    An experimental investigation of breakdown in metal-oxide-semiconductor (MOS) structures was performed. It is suggested that the theoretical approaches developed for liquid dielectrics be used for breakdown of thin amorphous solid-state films. The solid amorphous dielectric layers are shown to be a good model system to test ionization mechanisms of liquid breakdown
  • Keywords
    MIS structures; amorphous state; dielectric thin films; electric breakdown; silicon compounds; MOS structure; SiO2; amorphous dielectric layer; breakdown; ionization; liquid dielectric; solid-state film; statistical lag time; Amorphous materials; Dielectric breakdown; Dielectric liquids; Dielectric measurements; Dielectric thin films; Electric breakdown; Solid modeling; Solid state circuits; System testing; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation, 1998. Conference Record of the 1998 IEEE International Symposium on
  • Conference_Location
    Arlington, VA
  • ISSN
    1089-084X
  • Print_ISBN
    0-7803-4927-X
  • Type

    conf

  • DOI
    10.1109/ELINSL.1998.704689
  • Filename
    704689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1733976