Tradeoff between CE and CB SiGe HBTs for Power Amplification in Terms of Frequency-Dependent Linearity and Power-Gain Characteristics

Author

Qin, Guoxuan ; Wang, Guogong ; Jiang, Ningyue ; Ma, Zhenqiang

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI

fYear

2007

Firstpage

1

Lastpage

4

Abstract

The tradeoff between common-emitter (CE) and common-base (CB) SiGe HBTs for power amplification in terms of frequency-dependent linearity and power-gain characteristics is investigated. When both CE the CB HBTs are impedance-matched for maximum output power (P_out), the CB configuration exhibits higher power gain, however, with higher third-order intermodulation distortion (IMD3) than that of the CE configuration at high operation frequencies. At low operation frequencies, the CE configuration can exhibit the superiority on both power gain and IMD3 characteristics. New analytical expressions for IMD3 are derived and experimentally verified for the study of the frequency-dependent linearity characteristics of different configurations

Keywords

Ge-Si alloys; heterojunction bipolar transistors; intermodulation distortion; SiGe; common-base HBT; common-emitter HBT; frequency-dependent linearity; heterojunction bipolar transistor; impedance-matching; power amplification; power-gain characteristics; third-order intermodulation distortion; Drives; Frequency dependence; Germanium silicon alloys; Impedance matching; Intermodulation distortion; Linearity; Power engineering and energy; Power generation; Radio frequency; Silicon germanium; Common-base (CB); HBT; IMD3; SiGe; common-emitter (CE); frequency; intermodulation; linearity; power gain;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on

Conference_Location

Long Beach, CA

Print_ISBN

0-7803-9765-7

Electronic_ISBN

0-7803-9765-7

Type

conf

DOI

10.1109/SMIC.2007.322755

Filename

4117311