Comparison of Dynamic Loadlines of CE and CB SiGe HBTs under Equivalent Bias Conditions

Author

Li, Hui ; Wang, Guogong ; Ma, Zhenqiang

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI

fYear

2007

Firstpage

5

Lastpage

8

Abstract

Large-signal dynamic loadlines of common-emitter (CE) and common-base (CB) SiGe power HBTs are measured and compared to reveal the different amplification mechanisms under the two configurations. Under equivalent junction voltage bias conditions for the two configurations, CB HBT can provide higher power gain and high power-added efficiency (PAE) than CE HBT at low input power. However, CE HBT can deliver more output power due to its later compression of power gain than CB HBT. Different input and output matching conditions affect the out-of-phase characteristics of output current and voltage and thus the power performance characteristics of both configurations

Keywords

Ge-Si alloys; heterojunction bipolar transistors; power bipolar transistors; SiGe; common-base power HBT; common-emitter power HBT; equivalent bias conditions; heterojunction bipolar transistor; large-signal dynamic loadlines; power amplification; power handling; Frequency; Gain measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Power generation; Power measurement; Silicon germanium; Size measurement; Voltage; Common-base (CB); HBT; SiGe; common-emitter (CE); dynamic loadline; power amplification; power handling;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on

Conference_Location

Long Beach, CA

Print_ISBN

0-7803-9764-9

Electronic_ISBN

0-7803-9765-7

Type

conf

DOI

10.1109/SMIC.2007.322756

Filename

4117312