Title :
Influence of Collector Region Design on High-Frequency Large-Signal Performance of SiGe Power HBTs
Author :
Wang, Guogong ; Ma, Zhenqiang
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin-Madison Univ., Madison, WI
Abstract :
The impact of collector region design on the high-frequency large-signal power performance of common-emitter (CE) SiGe power HBTs is investigated. Load-pull measurements show that the large-signal power performance of low-breakdown-voltage devices is higher than that of the high-breakdown-voltage device under both class-A and class-AB operation modes. The study indicates that low-breakdown-voltage design is more suitable for CE SiGe HBTs that do not exhibit severe thermal effects to achieve higher power performance provided that sufficient mismatch ruggedness is ensured
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; power bipolar transistors; semiconductor device breakdown; semiconductor doping; SiGe; class-A operation; class-AB operation; collector region design; heterojunction bipolar transistors; high-breakdown-voltage device; high-frequency large-signal performance; load-pull measurements; low-breakdown-voltage devices; mismatch ruggedness; power HBT; power added efficiency; power gain; Current measurement; Design engineering; Doping; Gain measurement; Germanium silicon alloys; Impedance; Power amplifiers; Radio frequency; Silicon germanium; Voltage; Class A; SiGe; class AB; heterojunction bipolar transistors (HBTs); load impedance; maximum oscillation frequency; power added efficiency (PAE); power gain; ruggedness;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9764-9
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322757
