Title :
Low frequency noise in CMOSTs at cryogenic temperatures
Author :
Chang, J. ; Viswanathan, C.R.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
Low-frequency noise in silicon MOSFETs is characterized from room temperature down to 5 K. The input-referred noise spectra for n-channel transistors show no gate bias dependence, and the noise amplitude does not change by any significant order of magnitude at all temperatures. While the gate bias dependence in p-channel device flicker noise is observed at low temperature, some generation-recombination noise becomes dominant at temperatures below 30 K
Keywords :
cryogenics; electron device noise; insulated gate field effect transistors; random noise; 5 to 295 K; CMOST; LF noise; MOSFETs; cryogenic temperatures; flicker noise; gate bias dependence; generation-recombination noise; input-referred noise spectra; n-channel transistors; noise amplitude; p-channel device; 1f noise; Cryogenics; Low-frequency noise; MOSFETs; Noise generators; Noise level; Noise measurement; Silicon; Temperature dependence; Testing;
Conference_Titel :
Low Temperature Semiconductor Electronics, 1989., Proceedings of the Workshop on
Conference_Location :
Burlington, VT
DOI :
10.1109/LTSE.1989.50197
