High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-of-Roadmap Challenges

Author

Chevalier, P. ; Barbalat, B. ; Laurens, M. ; Vandelle, B. ; Rubaldo, L. ; Geynet, B. ; Voinigescu, S.P. ; Dickson, T.O. ; Zerounian, N. ; Chouteau, S. ; Dutartre, D. ; Monroy, A. ; Aniel, F. ; Dambrine, G. ; Chantre, A.

Author_Institution

STMicroelectron., Crolles

fYear

2007

Firstpage

18

Lastpage

23

Abstract

This paper presents the status of high-speed SiGe BiCMOS technologies at STMicroelectronics. Process and electrical characteristics of two 120-nm platforms, qualified or under development, are presented together with results demonstrated on optical and millimeter-wave circuits. Advanced developments addressing end-of-roadmap BiCMOS are also presented and discussed

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MIMIC; heterojunction bipolar transistors; high-speed integrated circuits; 120 nm; BiCMOS technologies; SiGe; heterojunction bipolar transistors; high-speed integrated circuits; millimeter-wave integrated circuits; BiCMOS integrated circuits; CMOS technology; Copper; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; High speed optical techniques; Millimeter wave circuits; Production; Silicon germanium; BiCMOS; Heterojunction Bipolar Transistors (HBT); Silicon Germanium (SiGe); millimeter-wave circuits; optical communications;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on

Conference_Location

Long Beach, CA

Print_ISBN

0-7803-9764-9

Electronic_ISBN

0-7803-9765-7

Type

conf

DOI

10.1109/SMIC.2007.322759

Filename

4117315