DocumentCode :
1734370
Title :
Milestones in deep reactive ion etching
Author :
Laermer, Franz ; Urban, Andrea
Author_Institution :
Robert Bosch GmbH, Stuttgart, Germany
Volume :
2
fYear :
2005
Firstpage :
1118
Abstract :
Deep reactive ion etching (DRIE) has virtually changed MEMS. The basic technology originally developed at Bosch overcomes design restrictions and compatibility problems related to the old wet-etching technology. Today, after a decade of "Bosch DRIE" in the field, a large variety of new MEMS devices is fabricated using this technology, and a broad DRIE-equipment supplier base is supporting costumer needs all over the world. The paper is telling the milestones from early development of the basic technology, the first steps into the MEMS-field, the way to mass-production, the first high-volume products, and the development of advanced solutions for high-rate etching, enhanced profile and uniformity control, and suppression of notching.
Keywords :
mass production; micromechanical devices; sputter etching; Bosch DRIE; Bosch process; MEMS; compatibility problems; deep reactive ion etching; design restrictions; enhanced profile; high-rate etching; high-volume products; mass production; notching suppression; profile control; uniformity control; wet-etching technology; Actuators; Anisotropic magnetoresistance; Geometry; Microelectromechanical devices; Micromechanical devices; Plasma applications; Plasma sources; Semiconductor materials; Silicon; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN :
0-7803-8994-8
Type :
conf
DOI :
10.1109/SENSOR.2005.1497272
Filename :
1497272
Link To Document :
بازگشت