Investigation of High Frequency Performance for Schottky-Barrier p-MOSFET

Schottky-barrier source/drain (S/D) MOSFETs (SB-MOS) have recently demonstrated leading edge high frequency (HF) performance, featuring a 280 GHz current gain cut-off frequency f_T at 30 nm of gate length. Although this figure represents the best ever recorded f_T for a p-MOSFET, little effort has been produced, so far, to analyze key small signal elements (SSE) such as the transconductance G _m and the total input capacitance C_gg that directly impact f_T. This work demonstrates that the loss of transconductance related to the Schottky barrier (SB) is counterbalanced by a reduction of the total gate capacitance