• DocumentCode
    1734392
  • Title

    RF characterization and parameter extraction for CMOS device models

  • Author

    Pekarik, John J. ; Jagannathan, Basanth ; Pan, Li-hong ; Wang, Jing ; Groves, Robert ; Li, Hongmei ; Tian, Xiaowei ; Greenberg, David R. ; Jin, Zhenrong ; Wagner, Lawrence

  • Author_Institution
    IBM Semicond. Res. & Dev. Center, Essex Junction, VT
  • fYear
    2007
  • Firstpage
    36
  • Lastpage
    39
  • Abstract
    We describe the measurement and extraction of high-frequency compact model parameters of MOSFETs for use in design of RF applications
  • Keywords
    CMOS integrated circuits; MOSFET; parameter estimation; semiconductor device models; CMOS device models; MOSFET; RF characterization; compact model parameters; parameter extraction; CMOS technology; Contact resistance; Electrical resistance measurement; MOSFETs; Parameter extraction; Radio frequency; Research and development; Semiconductor device modeling; Transceivers; Wiring; RFCMOS; characterization; compact models; parasitics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
  • Conference_Location
    Long Beach, CA
  • Print_ISBN
    0-7803-9765-7
  • Electronic_ISBN
    0-7803-9765-7
  • Type

    conf

  • DOI
    10.1109/SMIC.2007.322763
  • Filename
    4117319