Theoretical analysis of a new structure of optoelectronic integrated device (OEID)

Author

El-Mashade, Mohamed B. ; Ashry, M. ; Eladl, Sh M. ; Rageh, M.S.

Author_Institution

Dept. of Electr. Eng., Azhar Univ., Egypt

fYear

2003

Lastpage

42378

Abstract

The transient behavior of a new structure of optoelectronic integrated device (OEID) is studied theoretically. The device is composed of resonant cavity enhanced heterojunction phototransistor (RCE-HPT), and light emitting diode (LED). This version of devices will be called resonant cavity enhanced optoelectronic integrated devices (RCE-OEID). The transient behavior is evaluated based on the frequency response of the constituent devices and the optical feedback inside the device. The analytical expressions describing the transient response of the integrated device is derived. The results show that the transient behavior of this version of devices is strongly dependent on the optical feedback inside the device and it has very high optical gain than the conventional types as well as it presents two modes of operation in comparison with conventional types.

Keywords

cavity resonators; frequency response; integrated optoelectronics; light emitting diodes; optical feedback; phototransistors; transient response; LED; frequency response; heterojunction phototransistor; light emitting diode; optical feedback; optical gain; optoelectronic integrated device; resonant cavity; theoretical analysis; transient behavior; Frequency response; Integrated optics; Light emitting diodes; Mirrors; Optical devices; Optical feedback; Optical refraction; Optical variables control; Resonance; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Science Conference, 2003. NRSC 2003. Proceedings of the Twentieth National

Print_ISBN

977-5031-75-3

Type

conf

DOI

10.1109/NRSC.2003.1217369

Filename

1217369