Design of a wideband low noise amplifier for radio-astronomy applications

Author

Hamaizia, Zahra ; Sengouga, Nouredine ; Yagoub, Mustapha C E

Author_Institution

Lab. of Semicond. & Metallic Mater., Univ. of Mohamed Khider, Biskra, Algeria

fYear

2010

Firstpage

1

Lastpage

4

Abstract

In this work, the authors discuss the design of two low noise amplifiers (LNA) based on 1 μm gate-length pHEMT InP transistors and using two different topologies. Designed for radio astronomy applications, the first is a cascode circuit with a maximum gain of 15 dB and noise figure of 0.6 dB, while the second is a 2-stage cascaded amplifier with 27 dB of gain and 0.63 dB of noise figure. The two amplifiers exhibit an input 1 dB compression point of -22 dBm and -26 dBm respectively, and a third order input intercept point of -10 dBm and -5 dBm, respectively.

Keywords

III-V semiconductors; MMIC amplifiers; high electron mobility transistors; indium compounds; low noise amplifiers; radioastronomy; wideband amplifiers; cascode circuit; gain 15 dB; gain 27 dB; noise figure 0.6 dB; noise figure 0.63 dB; pHEMT transistors; radioastronomy applications; wideband low noise amplifier; Gain; Integrated circuit modeling; Microwave amplifiers; Noise; Noise figure; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD), 2010 XIth International Workshop on

Conference_Location

Gammath

Print_ISBN

978-1-4244-6816-4

Type

conf

DOI

10.1109/SM2ACD.2010.5672362

Filename

5672362