Title :
Very Low Noise in 90nm Node RF MOSFETs using a New Layout
Author :
Kao, H.L. ; Chin, Albert ; Liao, C.C. ; McAlister, S.P.
Author_Institution :
Dept. of Electron. Eng., Chang Cung Univ., Tao-Yuan
Abstract :
The authors have directly measured a record low minimum noise figure (NFmin) of 0.46 dB at 10 GHz, along with a high 16.6 dB associated gain, in an 8-finger 90 nm node MOSFET (LG = 65nm) without de-embedding. At 18 GHz, NFmin was 0.83 dB with 13.5 dB gain. This was achieved using a microstrip line layout to screen the RF noise generated by the lossy substrate
Keywords :
MOSFET; microwave field effect transistors; 0.46 dB; 0.83 dB; 10 GHz; 13.5 dB; 16.6 dB; 18 GHz; 90 nm; RF noise screening; low noise RF MOSFET; microstrip line layout; Conductivity; Coplanar transmission lines; Coplanar waveguides; Gain; MOSFETs; Microstrip; Noise figure; Noise measurement; Radio frequency; Scattering parameters; Associated Gain; MOSFET; RF Noise; fT;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9764-9
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322765
