Title :
Characterization of body node in PD SOI MOSFETs using 4-port VNA measurements
Author :
Lederer, D. ; Raskin, J.P.
Author_Institution :
Microwave Lab., UCL, Louvain-la-Neuve
Abstract :
Body-contacts (BC) partially depleted (PD) silicon-on-insulator (SOI) MOSFETs suffer from a loss of body potential control at frequencies higher than several hundreds of MHz due to the high value of the body resistance (Rbe) in currently available PD SOI technologies. This causes a reduction of the transconductance in dynamic threshold (DT) MOSFETs and an increase of output conductance in both DT MOSFETs and body-tied (BT) MOSFETs, thereby altering the performance of those devices for analogue/RF applications. A correct small signal modeling of these effects requires an accurate characterization of the body resistance and the body capacitances. This is what is proposed in this work, using for the first time 4-port VNA measurements
Keywords :
MOSFET; network analysers; semiconductor device measurement; semiconductor device models; semiconductor device testing; silicon-on-insulator; PD SOI MOSFET; RF applications; VNA measurements; analogue applications; body node characterization; body-contacts; body-tied MOSFET; dynamic threshold MOSFET; multiport measurements; partially depleted silicon-on-insulator MOSFET; small signal modeling; wideband characterization; Capacitance; Circuits; Degradation; Electrical resistance measurement; Fingers; Immune system; MOSFETs; Radio frequency; Silicon on insulator technology; Transconductance; Body node; body-contacted PD SOI MOSFETs; multiport measurements; wideband characterization;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9765-7
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322766
