Title :
The multistable charge controlled memory effect in SOI-transistors at low temperatures
Author :
Tack, M. ; Gao, M.H. ; Claeys, C. ; Declerck, G.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The operation of nMOS-transistors, made in SOI material, is investigated at low temperatures. A new phenomenon, the MCCM (multistable charge controlled memory) effect, is observed. Measurements demonstrating this MCCM effect are presented on nMOS transistors made in ZMR-SOI material. A physical model and an analytical model are given. Finally, some very promising applications of the MCCM-effect are highlighted, such as its use as a visible light sensor and as a very dense memory cell, with refresh times on the order of several hours
Keywords :
insulated gate field effect transistors; low-temperature techniques; semiconductor device models; semiconductor storage; semiconductor-insulator boundaries; SOI nMOS transistors; ZMR-SOI material; analytical model; low temperatures; multistable charge controlled memory effect; physical model; refresh times; very dense memory cell; visible light sensor; Analytical models; Conferences; Doping; Laser modes; MOSFETs; Optical materials; Temperature control; Threshold voltage; Transistors;
Conference_Titel :
Low Temperature Semiconductor Electronics, 1989., Proceedings of the Workshop on
Conference_Location :
Burlington, VT
DOI :
10.1109/LTSE.1989.50198
