Cryogenic Small Signal Operation of 0.18 μm MOSFETs

Author

Venkataraman, Sunitha ; Banerjee, Bhaskar ; Lee, Chang-Ho ; Laskar, Joy ; Cressler, John D.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA

fYear

2007

Firstpage

52

Lastpage

55

Abstract

In this work we present the cryogenic small signal ac performance of MOSFETs from a commercially available 0.18 μm technology node. The peak cut-off frequency (f_T) increases from 63GHz to 90GHz at 77K and the f_max increases from 50GHz to 78GHz at 77K. A simple small signal sub-circuit model is used to understand the dependence of device parameters with temperature. The understanding of cryogenic small signal performance is crucial for the development of RF CMOS integrated circuits for low temperature applications.

Keywords

CMOS integrated circuits; MOSFET; cryogenic electronics; integrated circuit modelling; radiofrequency integrated circuits; 0.18 micron; 50 GHz; 63 GHz; 77 K; 78 GHz; 90 GHz; MOSFET; RF CMOS integrated circuits; cryogenic small signal operation; simple small signal sub-circuit model; CMOS technology; Cryogenics; Extraterrestrial measurements; Fingers; MOSFETs; Microwave devices; RF signals; Radio frequency; Signal design; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on

Conference_Location

Long Beach, CA

Print_ISBN

0-7803-9764-9

Electronic_ISBN

0-7803-9765-7

Type

conf

DOI

10.1109/SMIC.2007.322767

Filename

4117323