Large-area low-cost substrate compatible CNT Schottky diode for THz detection

In this paper, a novel process is developed for the fabrication of CNT Schottky diodes that is simple to implement and large area compatible. The process utilizes an undercut and self-alignment approach for the fabrication of devices having short lengths (<; 1 um). Furthermore, many CNTs assembled in parallel are utilized in the fabrication of devices to attain good impedance matching. Details of THz detector NEP calculation, fabrication and test of diode devices after integration on a plastic substrate are presented. Measured I-V characteristics and sensitivity at 18 GHz demonstrate that high quality devices can be fabricated using the proposed approach. Preliminary results show that the device can attain NEP values in the range of 50-150pW/Hz⁰⁵ over a frequency range of 10 GHz-1THz, respectively.