Title :
Minimum Noise Figure of SiGe HBTs under Different Operation Configurations
Author :
Li, Hui ; Marsland, Robert A. ; Wang, Guogong ; Qin, Guoxuan ; Ma, Zhenqiang ; Niu, Guofu ; Cui, Yan ; Lie, Donald Y C
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI
Abstract :
Minimum noise figure (NFmin) of SiGe HBTs under common-base (CB) configuration is analyzed through noise modeling, calculation and measurements and compared with that under CE operation configuration. Results show that the two configurations have similar NF min at low frequencies. At high frequencies, the CB configuration has higher NFmin than the CE configuration, while higher gain is exhibited by the CB configuration than the CE configuration. Tradeoff between NFmin and power gain ought to be considered for circuits design in employing different configurations
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; HBT; SiGe; circuits design; minimum noise figure; noise modeling; Circuit synthesis; Electric variables measurement; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Low-noise amplifiers; Noise figure; Noise measurement; Silicon germanium; Common-base (CB); HBT; SiGe; common-emitter (CE); minimum noise figure (NFmin); power gain;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9765-7
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322768
