Title :
Comparison of radiation hardening techniques for standard CMOS technologies
Author :
Salem, M.S. ; Salem, M.S. ; Kayed, S.I. ; Ragai, H.F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Ain Shams Univ., Cairo, Egypt
Abstract :
This paper is mainly concerned with the comparison of two well-known hardness techniques on the circuit level rather than on the technology level (low-cost standard CMOS technology is assumed). The inverter has been taken as a case study. The implementation technology is CMOS 0.6μ from AMS.
Keywords :
CMOS integrated circuits; MOSFET; invertors; radiation hardening (electronics); Austria Mikro System; CMOS technology; complementary metal-oxide-semiconductor; field oxide transistor; inverter; radiation hardening techniques; CMOS technology; Circuits; Electron mobility; Electron traps; Inverters; Ionizing radiation; MOSFETs; Radiation hardening; Threshold voltage; X-rays;
Conference_Titel :
Radio Science Conference, 2003. NRSC 2003. Proceedings of the Twentieth National
Print_ISBN :
977-5031-75-3
DOI :
10.1109/NRSC.2003.1217374
