Title :
The Impact of Guard Rings on Proton Radiation Effects in SiGe HBTs
Author :
Jiang, Ningyue ; Ma, Zhenqiang
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin-Madison Univ., Madison, WI
Abstract :
The effects of proton radiation on SiGe HBTs with guard rings are investigated in this work. DC measurements on pre- and post-radiated devices show that different effects on the forward-mode and on the inverse-mode Gummel characteristics are observed due to the implementation of guard rings for SiGe HBTs. The inverse-mode Gummel plot shows a distinctive increase of emitter current after proton radiation, which has not been observed in any previous studies. SPICE Gummel-Poon models were extracted for both pre- and post-radiated devices. By analyzing the measured and simulated results, the parasitic substrate-collector junction diode associated with SiGe HBTs has been identified to be the source of the new phenomenon. It is believed that the radiation damages in the substrate-collector junction near the deep trench edges cause the increase of the emitter current observed in the inverse-mode Gummel plot
Keywords :
Ge-Si alloys; SPICE; diodes; heterojunction bipolar transistors; proton effects; DC measurements; HBT; SPICE Gummel-Poon models; SiGe; emitter current; guard rings; heterojunction bipolar transistors; inverse-mode Gummel plot; junction diode; proton radiation effects; substrate-collector junction; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Performance evaluation; Proton radiation effects; SPICE; Silicon germanium; Space technology; Substrates; Guard rings; SiGe; heterojunction bipolar transistors; proton radiation;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9764-9
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322769
