Power Gain Analysis of SiGe HBTs under Large-signal Power Matching Conditions

Author

Jiang, Ningyue ; Ma, Zhenqiang ; Jiang, Hao

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI

fYear

2007

Firstpage

68

Lastpage

71

Abstract

Power gain of SiGe HBTs under large-signal power matching conditions is analytically studied. It is found that, the transducer power gain for CE (common-emitter) and CB (common-base) configurations is the same at high frequencies for the same load impedance. At low frequencies, the CE configuration has much higher transducer power gain than the CB configuration. The theoretical analysis is verified with simulations using commercial device models. In addition, the influence of the load impedance on the maximum transducer power gain of CE and CB SiGe HBTs is investigated

Keywords

Ge-Si alloys; heterojunction bipolar transistors; low-power electronics; semiconductor device models; HBT; SiGe; common-base; common-emitter; large-signal power matching conditions; load impedance; power amplifiers; power gain analysis; Equivalent circuits; Germanium silicon alloys; Impedance matching; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Transducers; Voltage; Common-emitter; HBTs; SiGe; common-base; power amplifiers; power gain;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on

Conference_Location

Long Beach, CA

Print_ISBN

0-7803-9764-9

Electronic_ISBN

0-7803-9765-7

Type

conf

DOI

10.1109/SMIC.2007.322771

Filename

4117327