Title :
Power Gain Analysis of SiGe HBTs under Large-signal Power Matching Conditions
Author :
Jiang, Ningyue ; Ma, Zhenqiang ; Jiang, Hao
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI
Abstract :
Power gain of SiGe HBTs under large-signal power matching conditions is analytically studied. It is found that, the transducer power gain for CE (common-emitter) and CB (common-base) configurations is the same at high frequencies for the same load impedance. At low frequencies, the CE configuration has much higher transducer power gain than the CB configuration. The theoretical analysis is verified with simulations using commercial device models. In addition, the influence of the load impedance on the maximum transducer power gain of CE and CB SiGe HBTs is investigated
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; low-power electronics; semiconductor device models; HBT; SiGe; common-base; common-emitter; large-signal power matching conditions; load impedance; power amplifiers; power gain analysis; Equivalent circuits; Germanium silicon alloys; Impedance matching; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Transducers; Voltage; Common-emitter; HBTs; SiGe; common-base; power amplifiers; power gain;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9764-9
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322771
