• DocumentCode
    1734646
  • Title

    Extraction of Effective Carrier Velocity in RF MOSFETs

  • Author

    Yun, Yeonam ; Kang, In Man ; Park, Byung-Gook ; Lee, Jong Duk ; Shin, Hyungcheol

  • Author_Institution
    Sch. of EE, Seoul Nat. Univ.
  • fYear
    2007
  • Firstpage
    72
  • Lastpage
    75
  • Abstract
    A more accurate method based on the actual inversion charge measurement in this paper is proposed to extract the effective carrier velocity in RF MOSFETs. This method uses the gate-drain intrinsic capacitance and gmb-gm relation to get the actual inversion charge at various Vds, and above parameters are obtained from S-parameters. This method gives more accurate result over the whole range of Vds, because it doesn´t assume a linear approximation to obtain the inversion charge and it doesn´t limit the range of applicable Vds
  • Keywords
    MOSFET; charge measurement; RF MOSFET; S-parameters; charge measurement; effective carrier velocity; gate-drain intrinsic capacitance; Capacitance; Charge measurement; Cutoff frequency; Equations; Equivalent circuits; Intrusion detection; Linear approximation; MOSFETs; Radio frequency; Scattering parameters; Carrier velocity; MOSFET; S-parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
  • Conference_Location
    Long Beach, CA
  • Print_ISBN
    0-7803-9764-9
  • Electronic_ISBN
    0-7803-9765-7
  • Type

    conf

  • DOI
    10.1109/SMIC.2007.322772
  • Filename
    4117328
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1734646