Extraction of Effective Carrier Velocity in RF MOSFETs

A more accurate method based on the actual inversion charge measurement in this paper is proposed to extract the effective carrier velocity in RF MOSFETs. This method uses the gate-drain intrinsic capacitance and g_mb-g_m relation to get the actual inversion charge at various V_ds, and above parameters are obtained from S-parameters. This method gives more accurate result over the whole range of V_ds, because it doesn´t assume a linear approximation to obtain the inversion charge and it doesn´t limit the range of applicable V_ds