Title :
High Performance, Low Complexity Vertical PNP BJT Optimization for a 0.24 μm SiGe BiCMOS Technology
Author :
Voegeli, B. ; Gray, P. ; Dahlstrom, M. ; Feilchenfeld, N. ; Rainey, B. ; Previti-Kelly, R. ; Onge, S. St ; Joseph, A. ; Dunn, J.
Author_Institution :
IBM Syst. & Technol. Group, Essex Junction, VT
Abstract :
An isolated vertical PNP BJT with fT of 28 GHz and f MAX of 26 GHz available as a modular component in a 0.24 μm SiGe BiCMOS technology is described. This paper presents, to the authors´ knowledge, the highest fT ever published for a homojunction PNP device, as well as for a modular PNP in a BiCMOS technology. The VPNP device is fabricated using a low complexity integration scheme and is optimized to complement the high breakdown SiGe NPN HBT
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar transistors; 0.24 micron; 26 GHz; 28 GHz; BiCMOS technology; PNP BJT; SiGe; BiCMOS integrated circuits; CMOS process; CMOS technology; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Isolation technology; Silicon carbide; Silicon germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9764-9
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322774
