Title :
Highly sensitive SnO2-based gas sensor for indoor air quality monitoring
Author :
Shi, Liqin ; Hasegawa, Y. ; Katsube, T. ; Nakano, M. ; Nakamura, K.
Author_Institution :
Fac. of Eng., Saitama Univ., Japan
Abstract :
The paper reports a highly sensitive SnO2-based gas sensor fabricated with radio-frequency induction plasma deposition (IPD) method. The generated sensing film consisted of various nano-sized particles, and they were found to be very sensitive to indoor air pollutants such as formaldehyde (HCHO) and nitrogen dioxide (NO2) gas at extremely low gas concentration down to 20 ppb (parts-per-billion) with rapid response and recovery time less than several minutes. The physical properties of the sensing films were examined by SEM and XRD methods. The effects of posterior annealing treatment and temperature dependency on the sensors were also described in the paper. The results suggested that the fabricated sensors are promising for monitoring indoor air pollution.
Keywords :
IV-VI semiconductors; air pollution measurement; aluminium compounds; annealing; coating techniques; gas sensors; microsensors; nanotechnology; nitrogen compounds; organic compounds; plasma deposition; tin compounds; 10.6 A; 205 sec; 232 to 242 C; 650 nm; 8.0 kV; 84 kW; NO2; X-ray diffraction; formaldehyde; gas sensor; indoor air quality monitoring; low gas concentration sensitivity; microsensor fabrication; nanosized particle; nitrogen dioxide; posterior annealing treatment; radiofrequency induction plasma deposition; rapid response; recovery time; scanning electron microscopy; sensors temperature dependence; thin film sensor; Air pollution; Annealing; Gas detectors; Induction generators; Nitrogen; Plasmas; Radio frequency; Temperature sensors; Time factors; X-ray scattering;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN :
0-7803-8994-8
DOI :
10.1109/SENSOR.2005.1497294
