Design of a Distributed Amplifier with On-chip ESD Protection Circuit in 130 nm SOI CMOS Technology

Author

Si Moussa, M. ; El Kaamouchi, M. ; Wybo, G. ; Bens, A. ; Raskin, J.-P. ; Vanhoenacker-Janvier, D.

Author_Institution

Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve

fYear

2007

Firstpage

111

Lastpage

114

Abstract

A fully integrated common source distributed amplifier (CSDA) with ESD protection, designed and fabricated in 130 nm SOI CMOS technology, is presented. This CSDA requires a chip area of 0.75 mm² . A gain of 4.5 dB and a unity-gain bandwidth of 30 GHz are measured at 1.4 V supply voltage with a measured power consumption of 66 mW. Low capacitance diode is used for electrostatic discharge (ESD) protection for the RF input pin without altering the original design of the CSDA. The CSDA has an ESD protection level up to 1.45 A transmission line pulse (TLP) current, corresponding to 2 kV human body model (HBM) stress

Keywords

CMOS integrated circuits; distributed amplifiers; electrostatic discharge; microwave amplifiers; microwave integrated circuits; semiconductor diodes; silicon-on-insulator; 1.4 V; 130 nm; 30 GHz; 4.5 dB; 66 mW; SOI CMOS technology; distributed amplifier; electrostatic discharge; low capacitance diode; on-chip ESD protection circuit; CMOS technology; Distributed amplifiers; Electrostatic discharge; Electrostatic measurements; Gain measurement; Integrated circuit technology; Power measurement; Protection; Semiconductor device measurement; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on

Conference_Location

Long Beach, CA

Print_ISBN

0-7803-9765-7

Electronic_ISBN

0-7803-9765-7

Type

conf

DOI

10.1109/SMIC.2007.322782

Filename

4117338