Title :
The challenges and progress of USJ formation & process integration for 32nm technology and beyond
Author :
Tseng, Hsing-Huang ; Kalra, Pankaj ; Oh, Jungwoo ; Majhi, Prashant ; Liu, Tsu-Jae King ; Jammy, Raj
Author_Institution :
Semicond. Manuf. Technol. (SEMATECH), Austin, TX
Abstract :
Future devices will be fabricated with high-k/metal gate stack and possibly employ high mobility channel materials. Ultra shallow junction (US J) research targeted for devices scaled to 32 nm and beyond should address the compatibility with the advanced gate stack and new channel materials. This paper discusses recent progress in USJ formation targeted for future Si and Ge channel devices. Challenges of USJ module for scaled CMOS technologies will be highlighted.
Keywords :
CMOS integrated circuits; elemental semiconductors; germanium; nanotechnology; silicon; high mobility channel materials; high-k/metal gate stack; nanofabrication; nanotechnology; process integration; scaled CMOS technology; size 32 nm; ultra shallow junction; Annealing; CMOS technology; Contact resistance; Gate leakage; High K dielectric materials; High-K gate dielectrics; III-V semiconductor materials; MOSFETs; Silicon; Transistors;
Conference_Titel :
Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1737-7
Electronic_ISBN :
978-1-4244-1738-4
DOI :
10.1109/IWJT.2008.4540005
