Title :
Extraction of equivalent high frequency models for TSV and RDL interconnects embedded in stacks of the 3D integration technology
Author :
Fourneaud, L. ; Lacrevaz, T. ; Charbonnier, J. ; Fuchs, C. ; Farcy, A. ; Bermond, C. ; Eid, E. ; Roullard, J. ; Flechet, B.
Author_Institution :
CNRS, Univ. de Savoie, Le Bourget du Lac, France
Abstract :
Interconnections such as Through Silicon Via (TSV) and Redistribution Layer (RDL) constitute one of key components to acquire high performance in 3D integrated circuits. These interconnections deal with an unusual environment as they are embedded in silicon substrates which could modify largely their propagation properties. In addition architectures of TSV and BRDL are complex in terms of design and stack of materials. Thus, it is essential to characterize them in high frequency in order to analyze, predict and optimize their performance. In this paper, we present results of TSV and BRDL electrical models extractions up to 20 GHz obtained by taking advantage of an innovative de-embedding method using silicon photoconductive properties.
Keywords :
elemental semiconductors; integrated circuit interconnections; integrated circuit modelling; silicon; substrates; three-dimensional integrated circuits; 3D integrated circuits; 3D integration technology; BRDL electrical models; RDL interconnects; Si; TSV interconnects; equivalent high-frequency models; innovative deembedding method; redistribution layer; silicon photoconductive properties; silicon substrates; through silicon via; Impedance; Integrated circuit interconnections; Silicon; Substrates; Three dimensional displays; Through-silicon vias; Transmission line matrix methods;
Conference_Titel :
Signal Propagation on Interconnects (SPI), 2011 15th IEEE Workshop on
Conference_Location :
Naples
Print_ISBN :
978-1-4577-0466-6
Electronic_ISBN :
978-1-4577-0465-9
DOI :
10.1109/SPI.2011.5898841
