Title :
New device architectures for nano-CMOS technology “walking” to end of the roadmap and the impact on RF/analog applications
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
The paper will focus on the double gate devices and gate-all-round devices, as well as the related impact on RF/analog scaling. Three kinds of double gate devices with different gate positions and different junction profiles will be generally estimated, including one extension of FINFET, named as BOI FINFETs which can combine the advantages of both SOI FinFETs and bulk FinFETs.The paper will discuss the device fabrication with compatible process integration scheme and related issues for further improvement, as well as the unique quasi-one-dimensional transport property, analog/RF performance and reliability behavior of this potential device.
Keywords :
CMOS integrated circuits; integrated circuit reliability; nanotechnology; BOI FINFET; RF/analog applications; SOI FinFET; analog/RF performance; bulk FinFET; device fabrication; double gate devices; gate all round devices; integration scheme; nano CMOS technology; quasi one dimensional transport property; reliability behavior; CMOS analog integrated circuits; CMOS technology; FinFETs; Leakage current; Legged locomotion; Linearity; Microelectronics; Nanoscale devices; Power dissipation; Radio frequency;
Conference_Titel :
Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1737-7
DOI :
10.1109/IWJT.2008.4540006
