Title :
Simulation on plasma doping for shallow junction formation
Author :
Yu, Min ; Ji, Huihui ; Li, Ming ; Huang, Ru ; Zhang, Xing
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
Plasma doping (PD) is a potential shallow junction technology. Accurate simulation on PD is needed for further development and application. The simulation on PD with localized molecular method is presented in this paper. The verification of simulation results on dopant concentration profile by experimental data is shown. Simulation on FinFET doping is illustrated. The efficiency of side doping on fin structure is investigated.
Keywords :
MOSFET; molecular dynamics method; plasma materials processing; semiconductor doping; FinFET doping; dopant concentration profile; fin structure; localized molecular method; plasma doping; shallow junction formation; side doping; CMOS technology; Computational modeling; Doping; FinFETs; Plasma density; Plasma devices; Plasma sheaths; Plasma simulation; Plasma sources; Voltage;
Conference_Titel :
Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1737-7
Electronic_ISBN :
978-1-4244-1738-4
DOI :
10.1109/IWJT.2008.4540008
