Title :
A Dual Band RFCMOS Amplifier Using Inductive Reactance Switching
Author :
Ujiie, Ryuichi ; Sato, Hisayasu ; Ishihara, Noboru
Author_Institution :
Graduate Sch. of Eng., Gunma Univ.
Abstract :
A dual-band RF CMOS amplifier using variable inductive reactance of LC resonant has been demonstrated. As inductive reactance of LC resonance can be changed by switching the resonant capacitance value, there are advantages that (i) desired inductive reactance can be easily controlled without a need for extra inductors requiring large chip area, and (ii) high reactance value can be obtained more than self inductance. To verify the validity, the dual-band amplifier has been designed and fabricated using a 0.13-mum CMOS process technology. We have succeeded in developing a dual-band amplifier which can switch the band dynamically from 2 to 4.6 GHz band
Keywords :
CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; microwave amplifiers; microwave integrated circuits; 0.13 micron; 2 to 4.6 GHz; CMOS process technology; LC resonance; dual band RF CMOS amplifier; inductive reactance switching; variable inductive reactance; CMOS process; CMOS technology; Capacitance; Dual band; Inductance; Inductors; Radio frequency; Radiofrequency amplifiers; Resonance; Switches; Amplifier; CMOS; LC resonance; RF; multiband;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9764-9
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322798
