A Concurrent Dual-Band VCO with Dual Resonance in Single Resonator

Author

Lee, Ja-Yol ; Lee, Sang-Heung ; Bae, Hyun-Cheol ; Kim, Sang-Hoon

Author_Institution

Electron. & Telecommun. Res. Inst., Daejeon

fYear

2007

Firstpage

135

Lastpage

138

Abstract

In this paper, we present a new concurrent dual-band VCO with single resonator. The proposed oscillator is a new concurrent dual-band VCO, which does generate two bands of carrier frequencies simultaneously. One band is generated from 5.1 GHz to 5.5 GHz, and the other is from 8.5 GHz to 9.1 GHz. Low phase noises at 100 kHz offset are measured as -111 dBc/Hz from 8.86 GHz and -114 dBc/Hz from 5.132 GHz, respectively. The concurrent dual-band VCO consumes a core current of 4 mA at 4.0 V. The VCO has been fabricated using 0.8mum SiGe BiCMOS process

Keywords

BiCMOS integrated circuits; MMIC oscillators; phase noise; voltage-controlled oscillators; 0.8 micron; 4 V; 4 mA; 5.1 to 5.5 GHz; 8.5 to 9.1 GHz; BiCMOS process; SiGe; concurrent dual-band VCO; dual resonance; low phase noises; BiCMOS integrated circuits; Dual band; Frequency; Germanium silicon alloys; Noise measurement; Phase measurement; Phase noise; Resonance; Silicon germanium; Voltage-controlled oscillators; VCO; concurrent; dual-band; phase noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on

Conference_Location

Long Beach, CA

Print_ISBN

0-7803-9764-9

Electronic_ISBN

0-7803-9765-7

Type

conf

DOI

10.1109/SMIC.2007.322799

Filename

4117344