Title :
Through-Substrate Interconnects for 3-D ICs, RF Systems, and MEMS
Author :
Wu, Joyce H. ; Alamo, Jesús A del
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA
Abstract :
Through-wafer interconnects can be used to alleviate interconnect scaling issues, ground inductance in Si RFICs, MEMS packaging, and SiP applications. The authors developed a through-substrate interconnect technology with resistance les10, record-low inductance, and sidewall capacitance that approaches theoretical values. Constructing a Faraday cage using through-substrate vias substantially reduced substrate noise for mixed-signal and system-on-chip applications. Equivalent circuit simulations of the Faraday cage provided insight into the substrate noise reduction mechanism
Keywords :
equivalent circuits; integrated circuit interconnections; micromechanical devices; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; silicon; system-in-package; system-on-chip; 3D integrated circuits; Faraday cage; MEMS packaging; RF systems; Si; equivalent circuits; mixed-signal integrated circuits; sidewall capacitance; substrate noise; system-in-package; system-on-chip; through-wafer interconnects; Capacitance; Circuit noise; Inductance; Integrated circuit interconnections; Micromechanical devices; Noise reduction; Packaging; Radio frequency; Radiofrequency integrated circuits; System-on-a-chip;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9765-7
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322804
