Title :
Profiling of carrier properties for shallow junctions using a new sub-nanometer step-by-step etching technique
Author :
Tsutsui, Kazuo ; Watanabe, Masamitsu ; Nakagawa, Yasumasa ; Sakai, Kazunori ; Kai, Takayuki ; Jin, Cheng-Guo ; Sasaki, Yuichiro ; Kakushima, Kuniyuki ; Ahmet, Parhat ; Mizuno, Bunji ; Hattori, Takeo ; Iwai, Hiroshi
Author_Institution :
Dept. of Electron. & Appl. Phys., Tokyo Inst. of Technol., Tokyo
Abstract :
A new step-by-step etching technique which is combined with electrical and/or physical analyses for in depth profiling of shallow junctions is proposed. The etching process is composed of scarified oxidation by using ozone and removal of the oxide formed. Combining the etching technique and Hall measurements, concentration profiles and mobility profiles of activated carriers were successfully obtained for the samples doped with boron (B) or arsenic (As) by the plasma doping (PD) method.
Keywords :
Hall effect; arsenic; boron; carrier density; carrier mobility; elemental semiconductors; etching; nanotechnology; oxidation; semiconductor doping; semiconductor junctions; silicon; Hall effect; Si:As; Si:B; arsenic dopant; boron dopant; carrier concentration; carrier mobility; depth profiling; plasma doping; scarified oxidation; shallow junctions; silicon(100) wafers; subnanometer step-by-step etching; Annealing; Boron; Electrical resistance measurement; Electrodes; Etching; Hafnium; Oxidation; Plasma measurements; Plasma temperature; Resists;
Conference_Titel :
Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1737-7
Electronic_ISBN :
978-1-4244-1738-4
DOI :
10.1109/IWJT.2008.4540018
