Implant and annealing process integration issues to reduce device variability for ≪10nm p+ & n+ ultra-shallow junctions

Both p+ and n+ ultra-shallow junctions (USJ) <10 nm deep have been realized by using <200 eV equivalent boron energy (<890 eV BF2 or <4 keV B18H22) or <1 keV equivalent arsenic energy (<500 eV P or <1.7 keV Sb) implants in combination with diffusion- less high temperature msec annealing and diffusion-less low temperature spike annealing thereby also reducing device micro-variation. Non-contact optical metrology techniques such as therma-probe (TW) and junction photo-voltage (RsL) were used to detect and monitor both implant and annealing equipment micro-uniformity and unique equipment signatures as well as junction "quality" (dopant activation, residual implant damage and junction leakage current).