A successful application of WLR fast test on Al via process optimisation

Author

Liu, X. ; Lo, K.F. ; Guo, Qinglai ; Cai, J.

Author_Institution

Reliability Eng. Group, Chartered Semicond. Manuf. Ltd., Singapore

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

74

Lastpage

77

Abstract

In this paper, a successful application of WLR fast electromigration (EM) test on Al via process optimization is presented. The impact of spin-on-glass (SOG) and pre sputter etch (PSE) on via performance is characterised by using standard wafer-level electromigration accelerated test (SWEAT). By eliminating the potential of SOG outgassing at the via and optimizing per sputter etch oxide loss (PSEOL), the optimization of the via process has been achieved with a 10% reduction in via resistance and a 6.5% improvement in yield

Keywords

aluminium; electromigration; integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; Al; SWEAT; WLR fast electromigration test; outgassing; pre sputter etch; spin-on-glass; sputter etch oxide loss; standard wafer-level electromigration accelerated test; via process optimization; Artificial intelligence; Etching; Foundries; Large Hadron Collider; Life estimation; Partial response channels; Petroleum; Semiconductor device testing; Vehicles; Wood industry;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 1999. IEEE International

Conference_Location

Lake Tahoe, CA

Print_ISBN

0-7803-5649-7

Type

conf

DOI

10.1109/IRWS.1999.830562

Filename

830562