Breakdown voltage distribution and extrinsic TDDB failures of MOS gate oxides

Author

Katto, Llisao

Author_Institution

Suwa Coll., Sci. Univ. of Tokyo, Nagano, Japan

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

85

Lastpage

91

Abstract

An oxide reliability analysis algorithm is used to predict extrinsic TDDB failures based on known intrinsic acceleration parameters. Adopting an effective oxide thickness model, the theory relates the oxide defects with breakdown voltage, V_BD, and the long-term oxide reliability of large area devices. The extrinsic TDDB data by Boyko and Gerlach (1989) is analyzed and the small time dependence of extrinsic failures is successfully predicted. It is newly demonstrated that the extrinsic temperature and field acceleration parameters (Ea and γ) are effectively different from those of intrinsic failures

Keywords

MOS capacitors; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; voltage distribution; MOS capacitors; MOS gate oxides; breakdown voltage distribution; dielectric breakdown; effective oxide thickness model; extrinsic TDDB failures; extrinsic failures; intrinsic acceleration parameters; large area devices; long-term oxide reliability; oxide defects; oxide reliability analysis algorithm; time dependence; Ambient intelligence; Electric breakdown; Large Hadron Collider; MOS capacitors; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 1999. IEEE International

Conference_Location

Lake Tahoe, CA

Print_ISBN

0-7803-5649-7

Type

conf

DOI

10.1109/IRWS.1999.830564

Filename

830564