Title :
Wideband Si Micromachined Transitions for RF Wafer-Scale Packages
Author :
Margomenos, Alexandros ; Lee, Yongshik ; Katehi, Linda P B
Author_Institution :
EMAG Technol. Inc., Ann Arbor, MI
Abstract :
Five types of micromachined vertical transitions appropriate for high frequency packaging are presented. The transitions are designed, fabricated and tested for silicon wafers. A "top-via" transition for on-wafer packaging is introduced. This design combines the packaging cavity and the RF transition on a single wafer in order to simplify the integration. This approach offers increased flexibility in the fabrication and encapsulation of on-wafer packaged devices. The remaining transitions are: a microstrip-to-microstrip transition, based on the use of a short finite ground coplanar waveguide (FGC) section for improved impedance matching. In addition, a microstrip-to-FGC, a FGC-to-microstrip, and FGC-to-FGC transitions are presented
Keywords :
coplanar waveguides; encapsulation; impedance matching; micromachining; microstrip transitions; silicon; wafer level packaging; 3D RF transitions; RF wafer-scale packages; encapsulation; finite ground coplanar waveguide; high frequency packaging; impedance matching; microstrip-to-microstrip transition; on-wafer packaging; packaging cavity; silicon micromachining; wideband silicon micromachined transitions; Coplanar waveguides; Encapsulation; Fabrication; Microstrip; Packaging; Radio frequency; Silicon; Testing; Waveguide transitions; Wideband; RF MEMS; on-wafer packaging; silicon micro-machining; three-dimensional RF transitions;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9765-7
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322790
