Title :
High Quality Passive Devices Fabricated Inexpensively in Advanced RF-CMOS Technologies with Copper BEOL
Author :
He, Z.X. ; Erturk, M. ; Ding, H. ; Moon, M. ; Gordon, E. ; Daley, D. ; Stamper, A.K. ; Coolbaugh, D. ; Eshun, E. ; Gordon, M. ; Joseph, A. ; Onge, S. St ; Dunn, J.
Author_Institution :
IBM Corp., Essex Junction, VT
Abstract :
High quality factor inductors and highly matched low capacitance density horizontal parallel plate metal-insulator-metal capacitors were fabricated in 130nm RF-CMOS technology with minimal or zero processing step addition. The high quality factor inductors were made using a novel triple damascene integration technique. Peak quality factor of 26 was demonstrated for a 0.3nH inductor. The low capacitance density MIM capacitors were fabricated using standard BEOL copper planes with zero addition of processing steps. Capacitance density value of 0.66 fF/mum 2 was achieved for a six level copper wiring BEOL. Impact of copper plane was characterized to ensure optimal manufacturing production
Keywords :
CMOS integrated circuits; MIM devices; Q-factor; capacitors; copper; inductors; radiofrequency integrated circuits; 130 nm; BEOL copper planes; advanced RF-CMOS technologies; copper BEOL; damascene integration; high quality factor inductors; high quality passive devices; metal-insulator-metal capacitors; Capacitance; Copper; Costs; Damascene integration; Fabrication; Inductors; MIM capacitors; Manufacturing; Q factor; Wire; Capacitors; Cu BEOL; Inductors; Passive Devices; RF-CMOS;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9764-9
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322791
