Title :
Simulation of hot-carrier degradation using self-consistent solution of semiconductor energy-balance equations and oxide carrier transport equations
Author :
Mukundan, S.K. ; Pagey, M.P. ; Schrimpf, R.D. ; Galloway, Kenneth F.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
fDate :
6/21/1905 12:00:00 AM
Abstract :
The Si-SiO2 interface has been modelled as an abrupt heterojunction to simulate hot-carrier injection and transport in oxides of n- and p-channel MOSFETs. Energy balance equations in silicon and continuity equations in the oxide and silicon regions are solved consistently with trapping-rate equations in the oxide to simulate hot-carrier induced carrier trapping and interface trap generation
Keywords :
MOSFET; electron traps; elemental semiconductors; hole traps; hot carriers; interface states; semiconductor device models; semiconductor-insulator boundaries; silicon; silicon compounds; MOSFETs; Si-SiO2; Si-SiO2 interface; abrupt heterojunction; continuity equations; energy balance equations; hot-carrier degradation; hot-carrier induced carrier trapping; hot-carrier injection; interface trap generation; oxide carrier transport equations; self-consistent solution; semiconductor energy-balance equations; simulation; trapping-rate equations; Degradation; Electrons; Hot carriers; Ionization; Semiconductor device doping;
Conference_Titel :
Integrated Reliability Workshop Final Report, 1999. IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-5649-7
DOI :
10.1109/IRWS.1999.830565
