Title :
Low-voltage green transistor using ultra shallow junction and hetero-tunneling
Author :
Bowonder, Anupama ; Patel, Pratik ; Jeon, Kanghoon ; Oh, Jungwoo ; Majhi, Prashant ; Tseng, Hsing-Huang ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA
Abstract :
A novel hetero-tunnel transistor (HtFET) with a heterostructure and ultra shallow junction parallel to the dielectric interface is proposed for low-voltage (low-power) electronics. Its potential of scaling Vdd down to 0.2 V is examined with quantum mechanical tunneling theory. Data from high-K metal-gate, Si on Ge hetero-tunnel transistor verifies the HtFET concept.
Keywords :
low-power electronics; tunnel transistors; dielectric interface; hetero-tunnel transistor; hetero-tunneling; heterostructure; low power electronics; low voltage electronics; low voltage green transistor; quantum mechanical tunneling theory; ultra shallow junction; Electrons; Energy consumption; High-K gate dielectrics; MOSFETs; Medical simulation; Quantum mechanics; Thermal management; Transistors; Tunneling; Voltage;
Conference_Titel :
Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1737-7
Electronic_ISBN :
978-1-4244-1738-4
DOI :
10.1109/IWJT.2008.4540025
