Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters

Author

Civale, Yann ; Lorito, Gianpaolo ; Xu, Cuiqin ; Nanver, Lis K. ; Van der Toorn, Ramses

Author_Institution

Delft Inst. of Microsyst. & Nanoelectron. - DIMES, Delft Univ. of Technol., Delft

fYear

2008

Firstpage

97

Lastpage

100

Abstract

The possible use of aluminum-mediated SPE silicon islands as ultrashallow Al-doped emitters in PNP SiGe HBTs is evaluated by electrical characterization of Si PNP test structures and 1-D MEDICI device simulations. The Al-doped emitters display electrical properties similar to B-doped Si. The surface recombination velocity nu at the Al-metal to SPE-Si interface and the minority carrier lifetime tau have been determined to be in the ranges of 7times10⁵ -1.2times10⁶ cm/s and 2-3times10^-8 s, respectively.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; surface recombination; 1D MEDICI device simulation; PNP HBT emitters; SPE; SiGe:Al; surface recombination; ultrashallow P+N junction; Atherosclerosis; Doping; Etching; Germanium silicon alloys; Heterojunction bipolar transistors; Medical simulation; Medical tests; Silicon germanium; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-1737-7

Electronic_ISBN

978-1-4244-1738-4

Type

conf

DOI

10.1109/IWJT.2008.4540026

Filename

4540026