Title :
Analysis of evolution to and beyond quasi-breakdown in ultra-thin oxide and oxynitride
Author :
Okandan, Murat ; Fonash, S. Tephen J ; Maiti, Bikas ; Tseng, H.H. ; Tobin, Hil
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
fDate :
6/21/1905 12:00:00 AM
Abstract :
The wearout and eventual failure of ultra-thin dielectrics have been of great interest since these dielectrics are critical in the reliability and performance of the state of the art CMOS technologies. This paper presents detailed analysis of transistors with 30 Å (measured by ellipsometry) oxide and oxynitride dielectrics as they evolve to and beyond quasi-breakdown due to FN stresses. Subsequent anneals and stresses were also performed to simulate the effects of further processing
Keywords :
CMOS integrated circuits; annealing; ellipsometry; integrated circuit reliability; semiconductor device breakdown; 30 angstrom; CMOS technologies; FN stresses; annealing; ellipsometry; eventual failure; oxynitride; performance; quasi-breakdown; reliability; transistors; ultra-thin dielectrics; ultra-thin oxide; wearout; Analytical models; Argon; Art; Computational Intelligence Society; Degradation; Dielectric measurements; Scattering; Simulated annealing; Stress measurement; Voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 1999. IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-5649-7
DOI :
10.1109/IRWS.1999.830569
