Recent advances in metallic source/drain MOSFETs

This paper reports on advances in metallic source/drain MOSFETs covering material engineering, integration issues such as metal/silicide selective etching and electrical performance in both DC and RF regimes. A soft and scalable etching procedure that selectively eliminates metallic platinum (Pt) without altering the platinum silicide phase (PtSi) is proposed. Strategies of Schottky barrier reduction based on low temperature dopant segregation are exemplified when PtSi is coupled to boron and arsenic. Finally, the integration of p-type boron-segregated contacts in thin-film SOI p-MOSFETs reveals state-of-the-art results both for DC and RF operation.