A Pt/GaN Schottky diode-type hydrogen sensor with a thin SiO2-passivated metal/semiconductor junction

Author

Tsai, Tsung-Han ; Chen, Huey-Ing ; Lin, Kun-Wei ; Hung, Ching-Wen ; Chen, Tzu-Pin ; Chen, Li-Yang ; Chu, Kuei-Yi ; Liu, Wen-Chau

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan

fYear

2008

Firstpage

164

Lastpage

167

Abstract

The hydrogen sensing and response characteristics of and Pt/GaN Schottky diodes with thin SiO₂-passivated metal/semiconductor junction under different-concentration hydrogen gases are studied over a wide temperature range in an air atmosphere. Experimentally, the studied device exhibits hydrogen sensing performance, including SF of 14685 and SR of 44636 (in 9970 ppm H₂/air), Deltaphi_B of 231.6 meV (in 9970 ppm H₂/air), temperature range (300 - 850 K) and voltage-operating sweep under forward and reverse bias conditions. According to the steady-state analysis on adsorption equilibrium, the studied device further shows the excellent performance for high temperature detection and improved activity of hydrogen adsorption reaction.

Keywords

Schottky diodes; semiconductor junctions; sensors; Schottky diode; hydrogen adsorption reaction; hydrogen sensor; passivated metal/semiconductor junction; Atmosphere; Gallium nitride; Gases; Hydrogen; Schottky diodes; Semiconductor diodes; Sensor phenomena and characterization; Strontium; Temperature distribution; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-1737-7

Electronic_ISBN

978-1-4244-1738-4

Type

conf

DOI

10.1109/IWJT.2008.4540041

Filename

4540041