Title :
A Pt/GaN Schottky diode-type hydrogen sensor with a thin SiO2-passivated metal/semiconductor junction
Author :
Tsai, Tsung-Han ; Chen, Huey-Ing ; Lin, Kun-Wei ; Hung, Ching-Wen ; Chen, Tzu-Pin ; Chen, Li-Yang ; Chu, Kuei-Yi ; Liu, Wen-Chau
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan
Abstract :
The hydrogen sensing and response characteristics of and Pt/GaN Schottky diodes with thin SiO2-passivated metal/semiconductor junction under different-concentration hydrogen gases are studied over a wide temperature range in an air atmosphere. Experimentally, the studied device exhibits hydrogen sensing performance, including SF of 14685 and SR of 44636 (in 9970 ppm H2/air), DeltaphiB of 231.6 meV (in 9970 ppm H2/air), temperature range (300 - 850 K) and voltage-operating sweep under forward and reverse bias conditions. According to the steady-state analysis on adsorption equilibrium, the studied device further shows the excellent performance for high temperature detection and improved activity of hydrogen adsorption reaction.
Keywords :
Schottky diodes; semiconductor junctions; sensors; Schottky diode; hydrogen adsorption reaction; hydrogen sensor; passivated metal/semiconductor junction; Atmosphere; Gallium nitride; Gases; Hydrogen; Schottky diodes; Semiconductor diodes; Sensor phenomena and characterization; Strontium; Temperature distribution; Temperature sensors;
Conference_Titel :
Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1737-7
Electronic_ISBN :
978-1-4244-1738-4
DOI :
10.1109/IWJT.2008.4540041
