Title :
Comparison of Shunt and Series/Shunt nMOS Single-Pole Double-Throw Switches for X-Band Phased Array T/R Modules
Author :
Kuo, Wei-Min Lance ; Comeau, Jonathan P. ; Andrews, Joel M. ; Cressler, John D. ; Mitchell, Mark A.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
This paper compares the performance of shunt and series/shunt single-pole double-throw nMOS switches designed in a 0.13 mum SiGe BiCMOS process for X-band phased array transmit/receive modules. From 8.5 to 10.5 GHz, the worst case return loss, insertion loss, and isolation are 14.5, 1.89, and 20.5 dB, respectively, for the reflective shunt switch, and 22.2, 2.33, and 22.5 dB, respectively, for the absorptive series/shunt switch. Both switches exhibit an IIP3 of about 28 dBm and dissipate no dc power. The performance of these switches are comparable to other CMOS switches found in triple well technologies, on non-standard substrates, using special device structures, or using extra dc biases
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; microwave switches; phased array radar; transceivers; 0.13 micron; 1.89 dB; 14.5 dB; 20.5 dB; 8.5 to 10.5 GHz; BiCMOS; CMOS switches; SiGe; X-band phased array T/R modules; insertion loss; nMOS switches; return loss; series/shunt switches; shunt switches; single-pole double-throw switches; transmit/receive modules; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Insertion loss; MOS devices; Phased arrays; Radar; Shunt (electrical); Silicon germanium; Switches; CMOS; X-band; phased array; radar; series/shunt switch; shunt switch; single-pole double-throw (SPDT) switch; transmit/receive (T/R) module;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9764-9
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322831
