Analysis of photoconductive sampling method for micro PCSS

Author

Qinggang, Liu ; Xia, Gao ; Xurui, Mao ; Xiaona, Lou ; Heng, Zhao ; Ling, Zhao ; Xiaotang, Hu

Author_Institution

State key Lab. of Precision Meas. Technol. & Instrum., Tianjin Univ., Tianjin

fYear

2008

Firstpage

172

Lastpage

175

Abstract

Via atomic force microscope (AFM)´s tip induced anodic oxidization and photolithograph method, a lOOnm wide metal-insulator-metal (MIM) junction instead of an air gap was fabricated on the GaAs substrate to make a micro type photoconductive semiconductor switch (PCSS). A PCSS signal test system based on photoconductive sampling (PC) method was adopted. The PCSS´s equivalent circuit mode was analyzed. The pulse width of the femtosecond laser is about 50 fs, the central wavelength is 800 nm, and the pulse energy is about lmJ with a repetition rate of 100 MHz. With this equivalent mode and experiment parameters, the pulse generator´s output was simulated via MATLAB. The performance of the sampling gate is analyzed, and its output charge Qs expression is explained.

Keywords

MIM devices; anodisation; atomic force microscopy; high-speed optical techniques; microswitches; photoconducting switches; photolithography; sampling methods; AFM; GaAs; GaAs substrate; anodic oxidization; atomic force microscope; equivalent circuit mode; femtosecond laser; metal-insulator-metal junction; micro photoconductive semiconductor switch; photoconductive sampling method; photolithograph method; sampling gate; Atomic force microscopy; Gallium arsenide; Metal-insulator structures; Optical pulses; Photoconducting materials; Photoconductivity; Sampling methods; Space vector pulse width modulation; Substrates; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-1737-7

Electronic_ISBN

978-1-4244-1738-4

Type

conf

DOI

10.1109/IWJT.2008.4540043

Filename

4540043