DocumentCode :
1736005
Title :
A Dynamic GHz-Band Switching Technique for RF CMOS VCO
Author :
Shibata, Kenichi ; Sato, Hisayasu ; Ishihara, Noboru
Author_Institution :
Graduate Sch. of Eng., Gunma Univ., Kiryu
fYear :
2007
Firstpage :
273
Lastpage :
276
Abstract :
A CMOS VCO circuit technique which enables a dynamic GHz-band switching has been described. To get wide band switching, it has been clarified analytically that keeping Q constant is important to configure the circuit. To meet this, an LC VCO circuit which can switch resonant capacitors and inductors simultaneously for switching the band has been suggested. To verify the effect, a dual band VCO circuit has been designed and fabricated by using a 0.13-mum standard CMOS process technology and succeeded in switching the band dynamically from 2 to 4 GHz with keeping 1 MHz offset phase noise of -120 dBc/Hz
Keywords :
CMOS integrated circuits; radiofrequency integrated circuits; switching circuits; voltage-controlled oscillators; 0.13 micron; 2 to 4 GHz; GHz band switching; LC VCO circuit; MOSFET switch; RF CMOS VCO; dual band VCO circuit; inductors; multi-band; multi-mode; resonant capacitors; wide band switching; CMOS technology; Inductors; RLC circuits; Radio frequency; Resonance; Switched capacitor circuits; Switches; Switching circuits; Voltage-controlled oscillators; Wideband; CMOS; GHz-band switching; LC-VCO; MOSFET switch; multi-band; multi-mode;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9765-7
Electronic_ISBN :
0-7803-9765-7
Type :
conf
DOI :
10.1109/SMIC.2007.322811
Filename :
4117378
Link To Document :
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