An advanced non-classical self-aligned quasi-SOI MOSFET with Π-shaped semiconductor conductive layer to ease ultra-shallow junction requirement

In this work, our main aim is to investigate the effects of source/drain thickness on the characteristics of self-aligned quasi-silicon-on-insulator metal-oxide semiconductor field-effect transistor with pi-shaped semiconductor conductive layer. According to the simulation results, we found that the short-channel characteristics and self-heating are much sensitive to the source/drain thickness. A reasonable explanation of the results is given. Furthermore, an ultra-thin silicon-on-insulator structure is also designed to be compared with the proposed structure.