• DocumentCode
    1736024
  • Title

    Fabrication of single crystal silicon resonators with narrow gaps

  • Author

    Kiihamaki, J. ; Kaajakari, V. ; Luoto, H. ; Kattelus, H. ; Yli-Koski, M.

  • Author_Institution
    VTT Inf. Technol., Finland
  • Volume
    2
  • fYear
    2005
  • Firstpage
    1354
  • Abstract
    This paper reports a novel method for fabrication of micromechanical resonators with very narrow gaps for electrostatic actuation. Vertical 50-180 nm wide gaps are realized using sacrificial etching of oxide sandwiched between APCVD deposited epipoly and patterned single crystal silicon structure layer of SOI wafer.
  • Keywords
    chemical vapour deposition; crystal resonators; electrostatic actuators; micromechanical resonators; silicon-on-insulator; sputter etching; 50 to 180 nm; APCVD deposition; deep reactive ion etching; device fabrication; electrostatic actuation; electrostatic transduction; epipoly; micromechanical resonators; narrow gaps; sacrificial etching; silicon on insulator; single crystal silicon structure; Electrodes; Electrostatics; Etching; Fabrication; Force sensors; Information technology; Micromechanical devices; Resonator filters; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
  • Print_ISBN
    0-7803-8994-8
  • Type

    conf

  • DOI
    10.1109/SENSOR.2005.1497332
  • Filename
    1497332
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1736024