Title :
Fabrication of single crystal silicon resonators with narrow gaps
Author :
Kiihamaki, J. ; Kaajakari, V. ; Luoto, H. ; Kattelus, H. ; Yli-Koski, M.
Author_Institution :
VTT Inf. Technol., Finland
Abstract :
This paper reports a novel method for fabrication of micromechanical resonators with very narrow gaps for electrostatic actuation. Vertical 50-180 nm wide gaps are realized using sacrificial etching of oxide sandwiched between APCVD deposited epipoly and patterned single crystal silicon structure layer of SOI wafer.
Keywords :
chemical vapour deposition; crystal resonators; electrostatic actuators; micromechanical resonators; silicon-on-insulator; sputter etching; 50 to 180 nm; APCVD deposition; deep reactive ion etching; device fabrication; electrostatic actuation; electrostatic transduction; epipoly; micromechanical resonators; narrow gaps; sacrificial etching; silicon on insulator; single crystal silicon structure; Electrodes; Electrostatics; Etching; Fabrication; Force sensors; Information technology; Micromechanical devices; Resonator filters; Silicon; Voltage;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN :
0-7803-8994-8
DOI :
10.1109/SENSOR.2005.1497332
