Title :
A CMOS Power Amplifier using Ground Separation Technique
Author :
Aniktar, Hüseyin ; Sjölan, Henrik ; Mikkelsen, Jan H. ; Larsen, Torben
Author_Institution :
Dept. of Electron. Syst., Aalborg Univ.
Abstract :
This work presents an on-chip ground separation technique for power amplifiers. The ground separation technique is based on separating the grounds of the amplifier stages on the chip and thus any parasitic feedback paths are removed. Simulation and experimental results show that the technique makes the amplifier less sensitive to bondwire inductance, and consequently improves the stability and performance. A two-stage CMOS RF power amplifier for WCDMA mobile phones is designed using the proposed on-chip ground separation technique. The power amplifier is fabricated in a 0.25mum CMOS process. It has a measured 1-dB compression point between 1920MHz and 1980MHz of 21.3plusmn0.5dBm with a maximum PAE of 24%. The amplifier has sufficiently low ACLR for WCDMA (-33 dB) at an output power of 20 dBm
Keywords :
CMOS integrated circuits; code division multiple access; microwave power amplifiers; mobile handsets; 0.25 micron; 1920 to 1980 MHz; CMOS RF power amplifier; WCDMA; amplifier stages; bondwire inductance; ground separation technique; mobile phones; on-chip ground separation; Bonding; CMOS process; Feedback; Inductance; Mobile handsets; Multiaccess communication; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Stability;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9764-9
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322813
