Carrier density profiling of ultra-shallow junction layer through corrected C-V plotting

The aim of this report is to present and justify a new approach for carrier density profiling in ultra-shallow junction (USJ) layer. This new approach is based on a capacitance measurement model, which takes series impedance, shunt resistance and the presence of a boron skin on the USJ layer into account. It allows us to extract the depletion layer capacitances in the USJ layer from C-V plotting more accurately and hence to obtain better carrier density profiles. Based on this new approach the carrier density profiles of different USJ layers with and without halo-style implants are obtained and discussed.